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| (Source: Kingmax Digital) |
Samsung Electronics has acquired six U.S. patents from Taiwanese memory maker Kingmax Digital, according to records from the U.S. Patent and Trademark Office.
The transactions were recorded in October 2025 and transfer ownership of patents covering ferroelectric-based memory and transistor technologies aimed at low-power, high-speed and high-density nonvolatile memory applications.
The acquired patents are titled "Ferroelectric Memory, Data Reading/Writing Method and Manufacturing Method Thereof and Capacitor Structure" (US 10,304,512), "Ferroelectric Memory and Capacitor Structure Thereof" (US 10,586,582), "Three-Dimensional Memory Device and Manufacturing Method Thereof" (US 10,424,598), "Three-Dimensional Memory Device and Manufacturing Method Thereof" (US 10,777,578), "Vertical Ferroelectric Thin Film Storage Transistor and Data Write and Read Methods Thereof" (US 10,367,004), and "Field Effect Transistor, Memory Element and Manufacturing Method of Charge Storage Structure Using Paraelectric and Ferroelectric Material" (US 10,403,721).
The patents broadly relate to next-generation nonvolatile memory technologies that leverage ferroelectric properties to enable fast switching, low operating voltage and improved scalability. Several disclosures focus on three-dimensional memory architectures and ferroelectric field-effect transistors, or FeFETs, while others address capacitor structures, vertical storage transistors and charge storage designs combining paraelectric and ferroelectric materials.
USPTO records show that the patents were filed between 2018 and 2019 and issued between 2019 and 2020.
By PatenTrip
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