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| (Source: SanDisk) |
Samsung Electronics has acquired 113 U.S. memory semiconductor patents from SanDisk, finalizing a series of transactions in February and March 2025. The portfolio is predominantly rooted in semiconductor memory and non‑volatile storage technologies.
The acquired patents cover a range of technological innovations, including:
Non‑Volatile and Flash Memory Technologies: Advanced techniques for efficient data storage and retrieval, incorporating state‑of‑the‑art programming and erasing methods.
Resistive Switching Memory (RRAM) and Innovative Memory Cell Designs: Novel memory cell architectures that leverage resistive switching and emerging materials, such as carbon nanotubes, to enhance performance.
3D Memory and Cross‑Point Architectures: Systems designed to achieve higher memory density and improved performance through vertical stacking and cross‑bar array configurations.
Memory Interfaces and System Architectures: Methods that optimize communications between memory devices and host systems, including advanced controller techniques and interleaving strategies.
Semiconductor Packaging, Interconnect Technologies, and Manufacturing Processes: Innovations aimed at improving device reliability and performance via novel packaging and interconnect methods.
Media Data Processing and Storage: Techniques for efficient data handling and storage management.
These patents describe memory cell design, programming/erasing operations, controller technology, 3D integration, and the use of advanced materials and manufacturing processes.
This acquisition is the first instance in which Samsung Electronics has purchased patents from SanDisk. Western Digital acquired SanDisk in 2016, integrating its flash storage portfolio into a broader storage business. However, in February 2025, SanDisk announced its separation from Western Digital and is now operating as an independent public company trading on Nasdaq under the ticker "SNDK."
In 2022, Samsung Electronics and Western Digital signed a memorandum of understanding (MOU) to standardize next‑generation data placement, processing, and fabrics (D2PF) storage technologies, with an initial focus on developing Zoned Storage solutions. While the collaboration targets system‑ and interoperability‑level improvements, Samsung's recent patent purchase focuses on the device and circuit level.
▷Related Article: Western Digital Acquires 516 U.S. Patents from Sandisk in 2024 (2024. 12. 23.)
The list of U.S. patents Samsung Electronics purchased from SanDisk (Source: USPTO):
Patent Application Invention title
9830084 15176070 Writing Logical Groups of Data to Physical Locations in Memory Using Headers
8575739 13102291 COL-BASED SEMICONDUCTOR PACKAGE INCLUDING ELECTRICAL CONNECTIONS THROUGH A SINGLE LAYER LEADFRAME
11158369 16232639 ON-CHIP NON-VOLATILE MEMORY (NVM) SEARCH
11152067 16253980 CONTENT ADDRESSABLE MEMORY WITH SPIN-ORBIT TORQUE DEVICES
11170290 16368441 REALIZATION OF NEURAL NETWORKS WITH TERNARY INPUTS AND BINARY WEIGHTS IN NAND MEMORY ARRAYS
11157197 16438945 SOCKET INTERCONNECTOR FOR HIGH PAD COUNT MEMORY CARDS
11150839 16720455 Host and Method for Interleaving Data in a Storage System for Enhanced Quality of Service
11169744 16836679 Boosting Reads of Chunks of Data
11210001 16855549 STORAGE DEVICE PARAMETER MONITORING FOR LOAD BALANCING
11170852 16910871 CROSS-BAR ARRAYS HAVING STEERING ELEMENT WITH DIODE
11184650 16917458 AUTOMATIC TRANSCODING OF MEDIA DATA IN A DATA STORAGE DEVICE
12002508 17450940 ON-CHIP NON-VOLATILE MEMORY (NVM) SEARCH
11743517 17533523 GENERATING TRANSCODED MEDIA USING DATA STORAGE DEVICES
7537968 11765254 JUNCTION DIODE WITH REDUCED REVERSE CURRENT
7824956 11772082 MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
7846785 11772090 MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
8558220 11968156 MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME
8621137 12082222 METADATA REBUILD IN A FLASH MEMORY CONTROLLER FOLLOWING A LOSS OF POWER
7796435 12138382 METHOD FOR CORRELATED MULTIPLE PASS PROGRAMMING IN NONVOLATILE MEMORY
7813172 12138387 NONVOLATILE MEMORY WITH CORRELATED MULTIPLE PASS PROGRAMMING
7812335 12216110 SIDEWALL STRUCTURED SWITCHABLE RESISTOR CELL
8059447 12339338 CAPACITIVE DISCHARGE METHOD FOR WRITING TO NON-VOLATILE MEMORY
7978507 12339363 PULSE RESET FOR NON-VOLATILE STORAGE
8569730 12465315 CARBON-BASED INTERFACE LAYER FOR A MEMORY DEVICE AND METHODS OF FORMING THE SAME
8551850 12631913 METHODS OF FORMING A REVERSIBLE RESISTANCE-SWITCHING METAL-INSULATOR-METAL STRUCTURE
8291144 12676339 DUAL INTERFACE CARD WITH BACKWARD AND FORWARD COMPATIBILITY
8547725 12703289 METHOD OF PROGRAMMING A NONVOLATILE MEMORY CELL BY REVERSE BIASING A DIODE STEERING ELEMENT TO SET A STORAGE ELEMENT
8551855 12834942 MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME
8045378 12899291 NONVOLATILE MEMORY WITH CORRELATED MULTIPLE PASS PROGRAMMING
8557654 12966735 PUNCH-THROUGH DIODE
8553476 13039581 THREE DIMENSIONAL MEMORY SYSTEM WITH PAGE OF DATA ACROSS WORD LINES
8592793 13100657 Electrode Diffusions in Two-Terminal Non-Volatile Memory Devices
8748859 13441805 NON-VOLATILE MEMORY ARRAYS COMPRISING RAIL STACKS WITH A SHARED DIODE COMPONENT PORTION FOR DIODES OF ELECTRICALLY ISOLATED PILLARS
8913417 13556312 MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
8605486 13591097 CROSS POINT NON-VOLATILE MEMORY CELL
9904649 13619544 DUAL INTERFACE CARD WITH BACKWARD AND FORWARD COMPATIBILITY
9898437 13619723 HOST FOR USE WITH DUAL INTERFACE CARD WITH BACKWARD AND FORWARD COMPATIBILITY
8816315 13764065 MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
9804960 13828071 OVERPROVISION CAPACITY IN A DATA STORAGE DEVICE
9842053 13837210 SYSTEMS AND METHODS FOR PERSISTENT CACHE LOGGING
8809114 13964157 MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
9817605 14155617 SYSTEMS AND METHODS OF STORING DATA ASSOCIATED WITH CONTENT OF A DATA STORAGE DEVICE
9362338 14195636 VERTICAL THIN FILM TRANSISTORS IN NON-VOLATILE STORAGE SYSTEMS
9378814 14283034 SENSE AMPLIFIER LOCAL FEEDBACK TO CONTROL BIT LINE VOLTAGE
9804785 14493147 Nonvolatile Memory Adaptive to Host Boot Up Routine
9852799 14601794 CONFIGURATION PARAMETER MANAGEMENT FOR NON-VOLATILE DATA STORAGE
9824007 14630552 Data Integrity Enhancement to Protect Against Returning Old Versions of Data
9817752 14630557 Data Integrity Enhancement to Protect Against Returning Old Versions of Data
9847662 14630564 VOLTAGE SLEW RATE THROTTLING FOR REDUCTION OF ANOMALOUS CHARGING CURRENT
9792048 14746598 IDENTIFYING DISK DRIVES AND PROCESSING DATA ACCESS REQUESTS
9811477 14877614 MEMORY SYSTEM AND METHOD FOR WRITING DATA TO A BLOCK OF AN ERASED PAGE
9558949 14938637 Vertical Bit Line Non-Volatile Memory Systems And Methods Of Fabrication
9805793 15088902 FILAMENT CONFINEMENT IN REVERSIBLE RESISTANCE-SWITCHING MEMORY ELEMENTS
9837471 15098963 DUAL OTS MEMORY CELL SELECTION MEANS AND METHOD
9830987 15151359 SENSE AMPLIFIER LOCAL FEEDBACK TO CONTROL BIT LINE VOLTAGE
9812505 15157945 NON-VOLATILE MEMORY DEVICE CONTAINING OXYGEN-SCAVENGING MATERIAL PORTIONS AND METHOD OF MAKING THEREOF
9818798 15173104 VERTICAL THIN FILM TRANSISTORS IN NON-VOLATILE STORAGE SYSTEMS
9806256 15299919 RESISTIVE MEMORY DEVICE HAVING SIDEWALL SPACER ELECTRODE AND METHOD OF MAKING THEREOF
9853090 15379991 Vertical Bit Line Non-Volatile Memory Systems And Methods Of Fabrication
10121965 15692230 RESISTIVE RANDOM ACCESS MEMORY DEVICE CONTAINING DISCRETE MEMORY MATERIAL PORTIONS AND METHOD OF MAKING THEREOF
10067685 15785054 IDENTIFYING DISK DRIVES AND PROCESSING DATA ACCESS REQUESTS
10332604 15828407 CONFIGURATION PARAMETER MANAGEMENT FOR NON-VOLATILE DATA STORAGE
11177239 15916116 SEMICONDUCTOR DEVICE INCLUDING CONTROL SWITCHES TO REDUCE PIN CAPACITANCE
8546152 11960485 ENHANCED ENDPOINT DETECTION IN NON-VOLATILE MEMORY FABRICATION PROCESSES
7923767 11964445 NON-VOLATILE STORAGE WITH SUBSTRATE CUT-OUT AND PROCESS OF FABRICATING
8566505 12103273 FLASH MANAGEMENT USING SEQUENTIAL TECHNIQUES
7957197 12128535 NONVOLATILE MEMORY WITH A CURRENT SENSE AMPLIFIER HAVING A PRECHARGE CIRCUIT AND A TRANSFER GATE COUPLED TO A SENSE NODE
7800945 12138371 METHOD FOR INDEX PROGRAMMING AND REDUCED VERIFY IN NONVOLATILE MEMORY
7826271 12138378 NONVOLATILE MEMORY WITH INDEX PROGRAMMING AND REDUCED VERIFY
7965554 12167124 SELECTIVE ERASE OPERATION FOR NON-VOLATILE STORAGE
8014209 12167135 PROGRAMMING AND SELECTIVELY ERASING NON-VOLATILE STORAGE
8546214 12887328 P-TYPE CONTROL GATE IN NON-VOLATILE STORAGE AND METHODS FOR FORMING SAME
8551839 13043980 NON-VOLATILE STORAGE WITH SUBSTRATE CUT-OUT AND PROCESS OF FABRICATING
8546239 13157178 METHODS OF FABRICATING NON-VOLATILE MEMORY WITH AIR GAPS
8603890 13162475 AIR GAP ISOLATION IN NON-VOLATILE MEMORY
8575000 13186094 COPPER INTERCONNECTS SEPARATED BY AIR GAPS AND METHOD OF MAKING THEREOF
8582381 13403934 TEMPERATURE BASED COMPENSATION DURING VERIFY OPERATIONS FOR NON-VOLATILE STORAGE
8611148 13428305 DATA STATE-DEPENDENT CHANNEL BOOSTING TO REDUCE CHANNEL-TO-FLOATING GATE COUPLING IN MEMORY
8743624 13456005 PROGRAMMING AND SELECTIVELY ERASING NON-VOLATILE STORAGE
8566671 13538927 CONFIGURABLE ACCELERATED POST-WRITE READ TO MANAGE ERRORS
8605513 13622230 DETECTING THE COMPLETION OF PROGRAMMING FOR NON-VOLATILE STORAGE
9810723 13628465 CHARGE PUMP BASED OVER-SAMPLING ADC FOR CURRENT DETECTION
8576624 13759700 ON CHIP DYNAMIC READ FOR NON-VOLATILE STORAGE
8803220 13974696 P-TYPE CONTROL GATE IN NON-VOLATILE STORAGE
9793739 14018999 WIRELESS POWER TRANSMITTING DEVICE
9030016 14022864 SEMICONDUCTOR DEVICE WITH COPPER INTERCONNECTS SEPARATED BY AIR GAPS
8755234 14048015 TEMPERATURE BASED COMPENSATION DURING VERIFY OPERATIONS FOR NON-VOLATILE STORAGE
9779098 14078738 NAVIGATING THROUGH MEDIA OBJECT COLLECTION
9817749 14096979 APPARATUS AND METHOD OF OFFLOADING PROCESSING FROM A DATA STORAGE DEVICE TO A HOST DEVICE
RE45520 14231073 Data State-Dependent Channel Boosting To Reduce Channel-To-Floating Gate Coupling In Memory
RE45700 14284193 Program Temperature Dependent Read
RE45699 14290949 PROGRAMMING AND SELECTIVELY ERASING NON-VOLATILE STORAGE
9792046 14448762 Storage Module and Method for Processing an Abort Command
9804979 14584358 Ring Bus Architecture for Use in a Memory Module
9841910 14700814 MOVING AND COMMITTING VALID DATA ON A SET-BY-SET BASIS
9780809 14701130 TRACKING AND USE OF TRACKED BIT VALUES FOR ENCODING AND DECODING DATA IN UNRELIABLE MEMORY
9830998 14716794 STRESS PATTERNS TO DETECT SHORTS IN THREE DIMENSIONAL NON-VOLATILE MEMORY
9825048 14825433 Process for Word Line Connections in 3D Memory
9810916 14882258 Reticle With Reduced Transmission Regions For Detecting A Defocus Condition In A Lithography Process
9806089 15056465 METHOD OF MAKING SELF-ASSEMBLING FLOATING GATE ELECTRODES FOR A THREE-DIMENSIONAL MEMORY DEVICE
9805809 15253864 STATE-DEPENDENT READ COMPENSATION
9792994 15278684 Bulk Modulation Scheme to Reduce I/O Pin Capacitance
10679722 15297993 Storage System with Several Integrated Components and Method for Use Therewith
9904682 15364919 CONTENT-AWARE FILTER OPTIONS FOR MEDIA OBJECT COLLECTIONS
9837153 15468512 SELECTING REVERSIBLE RESISTANCE MEMORY CELLS BASED ON INITIAL RESISTANCE SWITCHING
9812209 15584339 SYSTEM AND METHOD FOR MEMORY INTEGRATED CIRCUIT CHIP WRITE ABORT INDICATION
10346325 15716046 RING BUS ARCHITECTURE FOR USE IN A MEMORY MODULE
10274841 15724488 RETICLE WITH REDUCED TRANSMISSION REGIONS FOR DETECTING A DEFOCUS CONDITION IN A LITHOGRAPHY PROCESS
11227006 15899334 CONTENT-AWARE FILTER OPTIONS FOR MEDIA OBJECT COLLECTIONS
10740231 16196077 DATA ACCESS IN DATA STORAGE DEVICE INCLUDING STORAGE CLASS MEMORY
11211141 16888622 Storage System with Multiple Components and Method for Use Therewith
11169918 16921719 DATA ACCESS IN DATA STORAGE DEVICE INCLUDING STORAGE CLASS MEMORY
11610642 17529663 Storage System with Multiple Components and Method for Use Therewith
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