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| (Source: Kioxia) |
SK Hynix and Kioxia have jointly filed two U.S. patent applications for magnetic memory devices, continuing their collaboration in next-generation memory technologies.
The applications, titled "Magnetic Memory Device", were submitted to the United States Patent and Trademark Office (USPTO) under Application Nos. 18/599,458 and 18/402,900 in March 2024, following their initial filings with the Japan Patent Office in 2023.
Magnetic Memory Device patent (Application No. 18/599,458) describes a memory cell comprising a switching element, a magnetoresistance effect element, and an electrode. The electrode includes a first non-magnetic layer in contact with the switching element and a second non-magnetic layer with an amorphous structure containing a metal oxide or metal nitride. This design enables efficient control of current flow within the memory cell, making it suitable for applications requiring high-speed data transmission, such as data centers and high-performance computing (HPC).
Magnetic Memory Device patent (Application No. 18/402,900) outlines a device consisting of a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, an oxide layer containing magnesium, a rare-earth element, and a noble-metal element, as well as a second nonmagnetic layer positioned on the oxide layer. The design enhances magnetic properties using magnesium oxide and rare-earth structures, making it ideal for use in automotive electronics and aerospace applications that require stable performance under extreme conditions.
These filings highlight SK Hynix and Kioxia’s joint efforts to advance magnetic memory technologies.
By PatenTrip
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