Samsung Wins PTAB IPR Institution on Two CM HK Sensor Fusion Patents

Samsung Wins PTAB IPR Institution on Two CM HK Sensor Fusion Patents
A representative figure from CM HK's patent titled "Electronic device for use in motion detection and method for obtaining resultant deviation thereof" (U.S. Patent No. 10,852,846).

Samsung Electronics has secured the institution of inter partes review proceedings at the Patent Trial and Appeal Board against two U.S. patents held by CM HK, clearing a key hurdle in an ongoing sensor fusion dispute.

In mid-December 2025, the PTAB instituted IPRs on CM HK's U.S. Patent Nos. 10,852,846 and 11,698,687, both titled "Electronic device for use in motion detection and method for obtaining resultant deviation thereof." Samsung filed the petitions on May 30, 2025, and the board's decision came roughly seven months later. Institution opens merits review and increases the likelihood that one or more challenged claims could ultimately be found unpatentable.

The two patents were asserted by CM HK in an infringement action filed against Samsung in October 2024 in the U.S. District Court for the Eastern District of Texas. Those same patents are the focus of the PTAB proceedings.

By obtaining institution on the asserted patents, Samsung has gained early momentum in the dispute, particularly as PTAB institution rates have trended lower in 2025.

Samsung has also brought a declaratory judgment action against CM HK seeking a finding of noninfringement. That case was filed in September 2024 in the Northern District of California and involves four patents in total. 

In addition to the two patents now under IPR, the suit covers U.S. Patent Nos. 10,275,038 and 10,817,072, which relate to motion sensor fusion-based three-dimensional motion and gesture recognition.

The challenged patents generally concern sensor fusion technologies for estimating and correcting device orientation, while the additional patents at issue address 3D motion and gesture recognition using fused sensor data.


By PatenTrip


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