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| (Source: TSMC) |
Taiwan Semiconductor Manufacturing Co. has acquired 10 U.S. semiconductor patents from Infineon Technologies AG, marking the Taiwanese foundry's first-ever patent purchase from the German chipmaker.
According to U.S. Patent and Trademark Office records, the deal closed in August 2025 and centers on advanced device-level technologies. The portfolio is dominated by FinFET and MUGFET innovations, alongside patents directed to novel material integration and reliability improvements.
Out of the 10 patents, six relate to FinFET/MUGFET devices and memory technologies (U.S. Patent Nos. 7,678,632; 7,723,786; 8,067,808; 8,039,904; 8,552,475; and 9,012,995). Two patents cover methods for locally rendering carbonic layers conductive (U.S. Patent Nos. 8,598,593 and 8,927,419), while the remaining two address structural stability and capacitor dielectric barrier layers (U.S. Patent Nos. 8,592,987 and 9,831,171).
Below is the full list of the 10 U.S. patents acquired by TSMC from Infineon Technologies AG.
Patent Application Invention title
7678632 11561170 MUGFET WITH INCREASED THERMAL MASS
7723786 11734069 APPARATUS OF MEMORY ARRAY USING FINFETS
8592987 11862211 SEMICONDUCTOR ELEMENT COMPRISING A SUPPORTING STRUCTURE AND PRODUCTION METHOD
8067808 12784524 APPARATUS OF MEMORY ARRAY USING FINFETS
8039904 12784526 APPARATUS OF MEMORY ARRAY USING FINFETS
8598593 13184346 Chip Comprising an Integrated Circuit, Fabrication Method and Method for Locally Rendering a Carbonic Layer Conductive
8552475 13297284 APPARATUS OF MEMORY ARRAY USING FINFETS
9012995 14047044 SEMICONDUCTOR DEVICE INCLUDING FINFET DEVICE
8927419 14078104 CHIP COMPRISING AN INTEGRATED CIRCUIT, FABRICATION METHOD AND METHOD FOR LOCALLY RENDERING A CARBONIC LAYER CONDUCTIVE
9831171 14539557 Capacitors with Barrier Dielectric Layers, and Methods of Formation Thereof
By PatenTrip
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